Surface morphology of silicon carbide epitaxial films
- 1 April 1995
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 24 (4) , 295-301
- https://doi.org/10.1007/bf02659690
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Site-competition epitaxy for superior silicon carbide electronicsApplied Physics Letters, 1994
- Performance limiting micropipe defects in silicon carbide wafersIEEE Electron Device Letters, 1994
- Growth and Characterization of 6H-SiC Bulk Crystals by the Sublimation MethodSpringer Proceedings in Physics, 1992
- Controlled growth of 3C-SiC and 6H-SiC films on low-tilt-angle vicinal (0001) 6H-SiC wafersApplied Physics Letters, 1991
- Growth of high quality 6H-SiC epitaxial films on vicinal (0001) 6H-SiC wafersApplied Physics Letters, 1990
- Growth and Characterization of Cubic SiC Single‐Crystal Films on SiJournal of the Electrochemical Society, 1987
- Microscopic growth mechanisms of semiconductors: Experiments and modelsJournal of Crystal Growth, 1984