The effect of long-range Coulomb potential on the electronic structure of localized states in homogeneous intrinsic amorphous semiconductors
- 1 February 1990
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine Letters
- Vol. 61 (2) , 77-81
- https://doi.org/10.1080/09500839008206483
Abstract
The magnitude of the spatial and energy scales in homogeneous intrinsic amorphous semiconductors resulting from the long-ranged Coulomb potential due to a random distribution of charged defects is calculated. It is shown that, for a reasonable concentration of charges, around 1018cm−3, in the absence of strong inhomogeneities, the magnitude of the long-range potential is small and does not affect significantly the electronic structure of the localized states. With strong inhomogeneities, the theoretical situation is not clear and more research is needed.Keywords
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