Room-temperature terahertz emission from nanometer field-effect transistors
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- 3 April 2006
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 88 (14)
- https://doi.org/10.1063/1.2191421
Abstract
Room-temperature generation of terahertz radiation in nanometer gate length InAlAs∕InGaAs and AlGaN∕GaN high-mobility transistors is reported. A well-defined source-drain voltage threshold for the emission exists, which depends on the gate bias. Spectral analysis of the emitted radiation is presented. The highest emission power emitted from a single device reached 0.1μW.Keywords
This publication has 9 references indexed in Scilit:
- Current instability and plasma waves generation in ungated two-dimensional electron layersApplied Physics Letters, 2005
- Magnetic field effect on the terahertz emission from nanometer InGaAs/AlInAs high electron mobility transistorsJournal of Applied Physics, 2005
- Voltage tuneable terahertz emission from a ballistic nanometer InGaAs∕InAlAs transistorJournal of Applied Physics, 2005
- TeraHertz Emission and Noise Spectra in HEMTsAIP Conference Proceedings, 2005
- Terahertz emission by plasma waves in 60 nm gate high electron mobility transistorsApplied Physics Letters, 2004
- Tunnelling- and barrier-injection transit-time mechanisms of terahertz plasma instability in high-electron mobility transistorsSemiconductor Science and Technology, 2002
- Plasma Wave Electronics for Terahertz ApplicationsPublished by Springer Nature ,2001
- Terahertz Sources and SystemsPublished by Springer Nature ,2001
- Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc currentPhysical Review Letters, 1993