Argon Ion Bombardment During Molecular Beam Epitaxy of Ge (001)
- 1 January 1988
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
Using in situ, real-time reflection high energy electron diffraction (RHEED), we have measured the evolution of Ge (001) surface morphology during simultaneous molecular beam epitaxy and Ar ion beam bombardment. Surprisingly, low-energy Ar ions during growth tend to smoothen the surface. Bombardment by the ion beam without growth roughens the surface, but the surface can be reversibly smoothened by restoring the growth beam. We have measured the effect of such “ion beam growth smoothening” above and below the critical temperature for intrinsic growth roughening. At all measured growth temperatures the surface initially smoothens, but below the critical roughening temperature the final surface morphology is rough whereas above this temperature the final morphology is smooth.Keywords
This publication has 7 references indexed in Scilit:
- High-power operation in InGaAs separate confinement heterostructure quantum well laser diodesApplied Physics Letters, 1988
- An optimized i n s i t u argon sputter cleaning process for device quality low-temperature (T≤800 °C) epitaxial silicon: Bipolar transistor and p n junction characterizationJournal of Applied Physics, 1987
- Molecular beam epitaxial growth of III-V compound semiconductor in the presence of a low-energy ion beam: A Monte Carlo simulation studyApplied Physics Letters, 1987
- Low-temperature epitaxial growth of Si and Ge and fabrication of isotopic heterostructures by direct ion beam depositionNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Reflection high energy electron diffraction studies of epitaxial growth on semiconductor surfacesJournal of Vacuum Science & Technology A, 1986
- The dependence of RHEED oscillations on MBE growth parametersJournal of Vacuum Science & Technology B, 1985
- Ion beam epitaxy of silicon on Ge and Si at temperatures of 400 KApplied Physics Letters, 1982