Ion beam epitaxy of silicon on Ge and Si at temperatures of 400 K
- 15 July 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (2) , 167-169
- https://doi.org/10.1063/1.93441
Abstract
Epitaxial growth of silicon on Ge (100), Si (100) and Si (111) wafers at substrate temperatures close to 400 K was observed in ion beam deposition experiments under UHV conditions (10−7 Pa). Single-charged Si+ beams of about 5-10 μA at an acceleration energy of 50 eV and a 5-mm-diam spot size were employed. Purity and crystallinity of the layers formed were checked by Auger electron spectroscopy (AES) and Rutherford high energy electron diffraction (RHEED).Keywords
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