Ion beam epiplantation
- 28 February 1982
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 56 (3) , 557-575
- https://doi.org/10.1016/0022-0248(82)90039-2
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Low-energy mass-separated ion beam deposition of materialsNuclear Instruments and Methods, 1981
- Ion cluster beam deposition of silver and germanium on siliconJournal of Crystal Growth, 1981
- Molecular beam epitaxy and field emission deposition for metal film growth on III–V compound semiconductors—A comparative studyThin Solid Films, 1979
- Surface processes controlling the growth of GaxIn1−xAs and GaxIn1−xP alloy films by MBEJournal of Crystal Growth, 1978
- Ion-beam plating using mass-analyzed ionsJournal of Applied Physics, 1977
- Thin-film deposition using low-energy ion beams (3) Mg+ ion-beam deposition and analysis of depositsJournal of Vacuum Science and Technology, 1977
- Thin-film deposition using low-energy ion beams (2) Bb+ ion-beam deposition and analysis of depositsJournal of Vacuum Science and Technology, 1977
- Interaction kinetics of As2 and Ga on {100} GaAs surfacesSurface Science, 1977
- Thin film deposition using low-energy ion beams. I. System specification and designJournal of Vacuum Science and Technology, 1976
- Molecular beam epitaxyProgress in Solid State Chemistry, 1975