Model Semiconductor Surfaces: Arsenic Termination of the Ge(111), Si(111) and Si(100) Surfaces

This publication has 15 references indexed in Scilit:

• Electronic structure, atomic structure, and the passivated nature of the arsenic-terminated Si(111) surface
  Physical Review B, 1987
• Surface bands for single-domain 2 × 1 reconstructed Si(100) and Si(100):As. Photoemission results for off-axis crystals
  Physical Review B, 1986
• Arsenic overlayer on Si(111): Removal of surface reconstruction
  Physical Review B, 1986
• Surface and bulk electronic structure of Ge(111)c(2×8) and Ge(111):As 1×1
  Physical Review B, 1986
• Surface band dispersion of Ge(111)c(2×8) and Ge(111):As 1×1
  Journal of Vacuum Science & Technology A, 1986
• Electronic and atomic structure of arsenic terminated Si(100)
  Journal of Vacuum Science & Technology A, 1986
• Symmetric arsenic dimers on the Si(100) surface
  Physical Review Letters, 1986
• Arsenic-terminated Ge(111): An ideal 1×1 surface
  Physical Review Letters, 1985
• Electronic structure of Ge(111) and Ge(111): H from angle-resolved-photoemission measurements
  Physical Review B, 1982
• Realistic Tight-Binding Calculations of Surface States of Si and Ge (111)
  Physical Review Letters, 1974