A Quasi‐Polycrystalline Approximation for Electronic States in Liquid Transition Metals and Tetrahedrally Bonded Semiconductors
- 1 June 1979
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 93 (2) , 617-627
- https://doi.org/10.1002/pssb.2220930220
Abstract
A simple method, analogous to the Thomas‐Fermi approximation, is described for constructing approximations to electronic states in structurally disordered ‘solids’ when at least part of the Hamiltonian may be represented in terms of localised orbitals and when the range of interaction of the orbitals is comparable with short‐range order present in the solid. A resistivity formula is also proposed for liquid transition metals.Keywords
This publication has 22 references indexed in Scilit:
- The density of states of liquid copperJournal of Physics F: Metal Physics, 1974
- A new approach to band gaps in ordered and disordered materialsJournal of Physics C: Solid State Physics, 1973
- Electronic Properties of an Amorphous Solid. I. A Simple Tight-Binding TheoryPhysical Review B, 1971
- Existence of a Gap in the Electronic Density of States of a Tetrahedrally Bonded Solid of Arbitrary StructurePhysical Review Letters, 1971
- Application of the Method of Tight Binding to the Calculation of the Energy Band Structures of Diamond, Silicon, and Sodium CrystalsPhysical Review B, 1971
- Critical analysis of the 'generalized coherent wave approximation'Journal of Physics C: Solid State Physics, 1970
- The role of p-phase shifts in covalent solidsPhysica Status Solidi (b), 1970
- Electron transport in liquid metals II. A model for the wave functions in liquid transition metalsJournal of Physics C: Solid State Physics, 1969
- The approximate calculation of electronic band structureProceedings of the Physical Society, 1967
- Interaction in Transition MetalsPhysical Review B, 1967