Effects of Dislocation on Planar Channelling of Energetic H+ and He+ Ions
- 1 December 1980
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 49 (6) , 2319-2325
- https://doi.org/10.1143/jpsj.49.2319
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Dechannelling of Energetic Charged Particles at Dislocations in An-Ag Solid SolutionJapanese Journal of Applied Physics, 1980
- Direct scattering of channelling He ions at dislocationsPhysics Letters A, 1980
- Quantitative depth distribution of dislocations by planar channelingPhysics Letters A, 1978
- Dechanneling by dislocations in ion-implanted AlPhysical Review B, 1978
- Investigation of dislocations by backscattering spectrometry and transmission electron microscopyNuclear Instruments and Methods, 1978
- Dislocation networks in phosphorus-implanted siliconPhilosophical Magazine, 1977
- Dechannelling of Fast Ions in Distorted Crystals. I. DislocationsJournal of the Physics Society Japan, 1976
- Energy Dependence of Channeling Analysis in Implantation Damaged AlPublished by Springer Nature ,1976
- Dechannelling of fast ions at dislocationsPhysica Status Solidi (a), 1970
- Dechannelling Cylinder of DislocationsPhysica Status Solidi (b), 1968