The new origin of dark-line defects in planar-stripe DH lasers
- 1 August 1977
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 13 (8) , 564-567
- https://doi.org/10.1109/jqe.1977.1069399
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Degradation sources in GaAs-AlGaAs double-heterostructure lasersIEEE Journal of Quantum Electronics, 1975
- Degradation in injection lasersIEEE Journal of Quantum Electronics, 1975
- Defect structure of degraded heterojunction GaAlAs−GaAs lasersApplied Physics Letters, 1975
- Influence of device fabrication parameters on gradual degradation of (AlGa)As cw laser diodesApplied Physics Letters, 1974
- Rapid degradation phenomenon in heterojunction GaAlAs–GaAs lasersJournal of Applied Physics, 1974
- Degradation of CW GaAs double-heterojunction lasers at 300 KProceedings of the IEEE, 1973