Improvedp/n junctions in Ge-doped GaAs grown by molecular beam epitaxy
- 1 April 1979
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 18 (4) , 353-356
- https://doi.org/10.1007/bf00899688
Abstract
No abstract availableKeywords
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- P-N Junction Formation during Molecular-Beam Epitaxy of Ge-Doped GaAsJournal of Applied Physics, 1971
- On the Measurement of Impurity Atom Distributions in Silicon by the Differential Capacitance TechniqueIBM Journal of Research and Development, 1968