Quantum-mechanical threshold voltage shifts of MOSFETs caused by high levels of channel doping
- 9 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 1, 495-498
- https://doi.org/10.1109/iedm.1991.235348
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
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- Measurements of bandgap narrowing in Si bipolar transistorsSolid-State Electronics, 1976
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967