Chalcogenide passivation of III–V semiconductor surfaces
- 1 November 1998
- journal article
- Published by Pleiades Publishing Ltd in Semiconductors
- Vol. 32 (11) , 1141-1156
- https://doi.org/10.1134/1.1187580
Abstract
Experimental studies of chalcogenide passivation (by sulfur and selenium atoms) of III–V semiconductor surfaces are analyzed. The characteristic features of chemical-bond formation, the atomic structure, and the electronic properties of III–V semiconductor surfaces coated with chalcogenide atoms are examined. Advances in recent years in the application of chalcogenide passivation in semiconductor technology and trends and prospects for further development of this direction are discussed.Keywords
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