Fermi-level movement at GaAs(001) surfaces passivated with sodium sulfide solutions
- 1 October 1991
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 70 (7) , 3707-3711
- https://doi.org/10.1063/1.349221
Abstract
Reflectance anisotropy spectrometry is used to study the electronic properties of sulfide‐passivated GaAs. The optical technique allows measurement of the Fermi‐level displacement at the surfacein situ, while the sample is immersed into a sulfide solution. The kinetics of the process was found to be very sensitive to conductivity type and doping level in GaAs.This publication has 20 references indexed in Scilit:
- Electro-optic effects in the optical anisotropies of (001) GaAsPhysical Review B, 1989
- Comparison of surface properties of sodium sulfide and ammonium sulfide passivation of GaAsJournal of Applied Physics, 1989
- Photoemission study of the band bending and chemistry of sodium sulfide on GaAs(100)Journal of Vacuum Science & Technology A, 1989
- Deep level transient spectroscopy study of GaAs surface states treated with inorganic sulfidesApplied Physics Letters, 1988
- Control of Fermi level pinning and recombination processes at GaAs surfaces by chemical and photochemical treatmentsJournal of Vacuum Science & Technology B, 1988
- Effects of Na2S and (NH4)2S edge passivation treatments on the dark current-voltage characteristics of GaAs p n diodesApplied Physics Letters, 1988
- Effects of passivating ionic films on the photoluminescence properties of GaAsApplied Physics Letters, 1987
- Measurements of above-bandgap optical anisotropies in the (0 0 1) surface of GaAsSolid State Communications, 1987
- Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivationApplied Physics Letters, 1987
- Schottky-Barrier Electroreflectance: Application to GaAsPhysical Review B, 1973