Comparison of surface properties of sodium sulfide and ammonium sulfide passivation of GaAs
- 1 June 1989
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 65 (11) , 4306-4310
- https://doi.org/10.1063/1.343316
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Sulfur as a surface passivation for InPApplied Physics Letters, 1988
- Schottky barrier formation on (NH4)2S-treated n- and p-type (100)GaAsApplied Physics Letters, 1988
- Control of Fermi level pinning and recombination processes at GaAs surfaces by chemical and photochemical treatmentsJournal of Vacuum Science & Technology B, 1988
- Effects of Na2S and (NH4)2S edge passivation treatments on the dark current-voltage characteristics of GaAs p n diodesApplied Physics Letters, 1988
- Effect of sodium sulfide treatment on band bending in GaAsApplied Physics Letters, 1988
- Near-ideal transport in an AlGaAs/GaAs heterostructure bipolar transistor by Na2S⋅9H2O regrowthApplied Physics Letters, 1988
- Effects of passivating ionic films on the photoluminescence properties of GaAsApplied Physics Letters, 1987
- Raman scattering measurements of decreased barrier heights in GaAs following surface chemical passivationApplied Physics Letters, 1987
- Nearly ideal electronic properties of sulfide coated GaAs surfacesApplied Physics Letters, 1987
- Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivationApplied Physics Letters, 1987