Shallow zinc diffusion in liquid phase epitaxial GaAs and (GaAl)As at 600 °C
- 1 January 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 42 (1) , 108-110
- https://doi.org/10.1063/1.93763
Abstract
The diffusion of zinc into GaAs and (GaAl)As was studied using a high resolution microsectioning technique. Diffusions were performed into epitaxially grown thin layers comparable to those used in injection laser structures; several boat grown GaAs were also studied. The diffusions were done at a temperature commonly used in device processing; a three-phase diffusant was used to preclude sample dissociation and damage. A diffusion coefficient of Zn in GaAs of 1.4×10−11 cm2 s−1 was obtained, and this is in good agreement with the extrapolation of the values obtained at higher temperatures. A marked difference in the diffusion profiles of GaAs and (GaAl)As was observed.Keywords
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