Superstrained superlattices: A processing approach
- 1 July 1989
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 66 (1) , 462-463
- https://doi.org/10.1063/1.343851
Abstract
Strained layer semiconductor heterostructures produced by molecular-beam epitaxy or metalorganic chemical vapor deposition growth are limited in thickness by relaxation producing dislocations, if a critical thickness tc is exceeded. We propose that, for a given thickness, strain values up to twice as large may be induced by post-growth processing with selective diffusion of the elemental constituents of the heterostructure.This publication has 6 references indexed in Scilit:
- Erratum: Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained-layer heterostructures [Appl. Phys. Lett. 4 7, 322 (1985)]Applied Physics Letters, 1986
- Impurity induced disordering of strained GaP-GaAs1−xPx(x∼0.6) superlatticesApplied Physics Letters, 1983
- Intermixing of an AlAs-GaAs superlattice by Zn diffusionJournal of Applied Physics, 1982
- Disorder of an AlAs-GaAs superlattice by impurity diffusionApplied Physics Letters, 1981
- Defects in epitaxial multilayersJournal of Crystal Growth, 1975
- Defects in epitaxial multilayersJournal of Crystal Growth, 1974