Dotierungseigenschaften von Eisen in Silizium
- 16 March 1981
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 64 (1) , 215-224
- https://doi.org/10.1002/pssa.2210640123
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Zum Nachweis von Rekombinationszentren in den Basiszonen von Si-GleichrichternPhysica Status Solidi (a), 1981
- Zum nachweis von Minoritätsträger-Traps in halbleiternPhysica Status Solidi (a), 1980
- Heat treatment of silicon and the nature of thermally induced donorsJournal of Applied Physics, 1979
- A quenched-in defect in boron-doped siliconJournal of Applied Physics, 1977
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974
- Thermally induced defects in n-type and p-type siliconPhysica Status Solidi (a), 1973
- Defects in Quenched SiliconPhysica Status Solidi (b), 1969
- Quenched‐in Levels in p‐Type SiliconPhysica Status Solidi (b), 1967
- Iron-boron pairing in siliconJournal of Physics and Chemistry of Solids, 1962
- Properties of Silicon Doped with Iron or CopperPhysical Review B, 1957