Electronic structure of a stepped silicon surface
- 14 July 1976
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 9 (13) , 2533-2540
- https://doi.org/10.1088/0022-3719/9/13/013
Abstract
The surface has an average (111) orientation with up and down steps of a double-layer height. The step edges run along the (110) direction and result in atoms with either one or two dangling bonds. The calculation is carried out in a simple linear-combination-of-atomic-orbitals approach and self-consistency is rudimentarily achieved. Density of states projected at various atoms and electronic charge densities are presented. The Fermi level is found to be lowered by 0.3 eV with respect to the corresponding value for the (111) perfect surface, in good agreement with experiment.Keywords
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