Optically Detected Magnetic Resonance in Fluorinated Amorphous Silicon (a-Si: H, F)
- 1 May 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (5A) , L291
- https://doi.org/10.1143/jjap.21.l291
Abstract
Optically detected magnetic resonance measurements have been carried out at 2 K in a-Si: H, F. One radiative centre and two kinds of nonradiative centres have been observed and identified as being trapped holes (A centres) and two kinds of dangling bond centres with different environments, respectively.Keywords
This publication has 6 references indexed in Scilit:
- The Effects of H and F on the ESR Signals in a-SiJapanese Journal of Applied Physics, 1982
- On the role of the dangling bond as a radiative centre in a-Si:HSolid State Communications, 1982
- Defect Creation by Optical Excitation in Hydrogenated Amorphous Silicon as Elucidated by Optically Detected Magnetic ResonanceJournal of the Physics Society Japan, 1982
- Characterization and luminescence of a-Si:H:Cl filmsJournal of Non-Crystalline Solids, 1981
- Radiative and nonradiative recombination processes in hydrogenated amorphous silicon as elucidated by optically detected magnetic resonanceSolid State Communications, 1981
- Spin-Dependent Radiative and Nonradiative Recombinations in Hydrogenated Amorphous Silicon: Optically Detected Magnetic ResonanceJournal of the Physics Society Japan, 1981