A micropower, small input-to-output delay, high-voltage bipolar driver/demultiplexer IC
- 1 February 1981
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 16 (1) , 23-30
- https://doi.org/10.1109/jssc.1981.1051531
Abstract
Describes a 2.6/spl times/2.6 mm bipolar driver/demultiplexer integrated circuit used to selectively switch one of six off-chip MOS devices. A carefully chosen chip architecture coupled with novel circuit techniques has reduced power consumption by more than two orders of magnitude over currently available micropower drivers that offer comparable performance. A low-voltage bipolar process (BV/SUB CEO/>20 V) that utilizes an extra deep n/SUP +/ diffusion (d-n/SUP +/) combines I/SUP 2/L and linear circuitry to achieve a micropower function (<100 /spl mu/W) with small input-to-output delay (<400 ns) and high-voltage capability (40 V max).Keywords
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