Reversible orientation-biased grain growth in thin metal films induced by a focused ion beam
- 31 December 2005
- journal article
- Published by Elsevier in Scripta Materialia
- Vol. 53 (11) , 1291-1296
- https://doi.org/10.1016/j.scriptamat.2005.07.030
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- High critical current density YBa2Cu3O7δ thick films using ion beam assisted deposition MgO bi-axially oriented template layers on nickel-based superalloy substratesJournal of Materials Research, 2001
- Influence of thermal spikes on preferred grain orientation in ion-assisted depositionPhysical Review B, 2000
- Mechanism of texture development in ion-beam-assisted depositionApplied Physics Letters, 1999
- Texture development mechanisms in ion beam assisted depositionJournal of Applied Physics, 1998
- Thermal-spike treatment of ion-induced grain growth: Theory and experimental comparisonPhysical Review B, 1993
- The heat-of-mixing effect on ion-induced grain growthJournal of Applied Physics, 1991
- Ion-bombardment-enhanced grain growth in germanium, silicon, and gold thin filmsJournal of Applied Physics, 1988
- Interface-Limited Grain-Boundary Motion during Ion BombardmentPhysical Review Letters, 1988
- Theory of thin-film orientation by ion bombardment during depositionJournal of Applied Physics, 1986
- Crystalline reorientation due to ion bombardmentNuclear Instruments and Methods, 1980