Improvements in dynamic and 1/f noise performances of GaAs MESFETs at cryogenic temperatures by using a monolithic process
- 1 August 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 40 (4) , 759-763
- https://doi.org/10.1109/23.256657
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Front-end in GaAsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1992
- Gallium-arsenide charge-sensitive preamplifier for operation in a wide low-temperature rangeNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1990
- A self-backgating GaAs MESFET model for low-frequency anomaliesIEEE Transactions on Electron Devices, 1990
- Considerations on Front End Electronics for Bolometric Detectors with Resistive ReadoutPublished by Springer Nature ,1987