A self-backgating GaAs MESFET model for low-frequency anomalies
- 1 January 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 37 (10) , 2148-2157
- https://doi.org/10.1109/16.59903
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Design of a GaAs operational amplifier using a self-backgating MESFET model including deep-level trap effectsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- GaAs MESFET modeling and nonlinear CADIEEE Transactions on Microwave Theory and Techniques, 1988
- GaAs FET device and circuit simulation in SPICEIEEE Transactions on Electron Devices, 1987
- Supression of drain conductance transients, drain current oscillations, and low-frequency generation—Recombination noise in GaAs FET's using buried channelsIEEE Transactions on Electron Devices, 1986
- Modelling frequency dependence of output impedance of a microwave MESFET at low frequenciesElectronics Letters, 1985
- Correlation between the backgating effect of a GaAs MESFET and the compensation mechanism of a semi-insulating substrateIEEE Transactions on Electron Devices, 1985
- Backdating in GaAs MESFET'sIEEE Transactions on Microwave Theory and Techniques, 1982
- A MESFET Variable-Capacitance Model for GaAs Integrated Circuit SimulationIEEE Transactions on Microwave Theory and Techniques, 1982
- A model relating electrical properties and impurity concentrations in semi-insulating GaAsJournal of Applied Physics, 1977
- General theory for pinched operation of the junction-gate FETSolid-State Electronics, 1969