Large-signal modeling and study of power saturation mechanisms in heterojunction bipolar transistors

Publisher Website

9 December 2002

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/mwsym.1991.146943

Abstract

No abstract available

Keywords

This publication has 4 references indexed in Scilit:

5 W monolithic HBT amplifier for broadband X-band applications
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A large-signal physical MESFET model for computer-aided design and its applications
IEEE Transactions on Microwave Theory and Techniques, 1989
An investigation of the power characteristics and saturation mechanisms in HEMTs and MESFETs
IEEE Transactions on Electron Devices, 1988
High power GaAlAs/GaAs HBTs for microwave applications
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