An analytical two-dimensional simulation for the GaAs MESFET drain-induced barrier lowering: a short-channel effect
- 1 May 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 37 (5) , 1182-1186
- https://doi.org/10.1109/16.108177
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Short-channel effect in fully depleted SOI MOSFETsIEEE Transactions on Electron Devices, 1989
- Analytic theory for current-voltage characteristics and field distribution of GaAs MESFET'sIEEE Transactions on Electron Devices, 1989
- An analytical two-dimensional model for silicon MESFETsIEEE Transactions on Electron Devices, 1988
- A subthreshold current model for GaAs MESFET'sIEEE Electron Device Letters, 1987
- Two-dimensional particle modeling of submicrometer gate GaAs FET's near pinchoffIEEE Transactions on Electron Devices, 1982