An analytic solution of the two-dimensional poisson equation and a model of gate current and breakdown voltage for reverse gate-drain bias in GaAs MESFETs
- 30 November 1989
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 32 (11) , 971-978
- https://doi.org/10.1016/0038-1101(89)90158-5
Abstract
No abstract availableKeywords
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