Platinum silicide-aluminum Schottky diode characteristics
- 15 September 1972
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 21 (6) , 256-257
- https://doi.org/10.1063/1.1654367
Abstract
The effects of heat treatment on platinum silicide Schottky diodes with aluminum metal contacts have been investigated. It has been found that the aluminum reacts with the silicide causing a change in the effective metal-semiconductor barrier height over a range of approximately 0.25 eV. Schottky diodes with initial platinum silicide characteristics convert to devices with barrier heights characteristic of aluminum after extended heat treatments.Keywords
This publication has 2 references indexed in Scilit:
- Planar Mesa Schottky Barrier DiodeIBM Journal of Research and Development, 1971
- ORIENTED GROWTH OF THE INTERFACIAL PtSi LAYER OR BETWEEN Pt AND SiApplied Physics Letters, 1967