Role of silicon and oxygen impurities in gallium antimonide grain boundary
- 1 February 1989
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 65 (3) , 1379-1381
- https://doi.org/10.1063/1.342986
Abstract
Grain-boundary barrier heights in polycrystalline gallium antimonide were shown to be due to the segregation of silicon and oxygen impurities as determined by electron probe microanalysis. From the variation of zero bias conductance with temperature the barrier height was measured for both n- and p-type bicrystals. The barrier heights were found to occur due to the depletion and accumulation layers in the vicinity of the grain boundary for n- and p-type samples, respectively. Reduction of barrier height after hydrogen annealing at 500 °C was observed.This publication has 8 references indexed in Scilit:
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