Side-wall damage in a transmission electron microscopy specimen of crystalline Si prepared by focused ion beam etching
- 1 July 1999
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 17 (4) , 1201-1204
- https://doi.org/10.1116/1.581795
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
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- Pressure and irradiation angle dependence of maskless ion beam assisted etching of GaAs and SiJournal of Vacuum Science & Technology B, 1985