Frequency response of HBTs as photodetectors
- 1 July 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Guided Wave Letters
- Vol. 3 (7) , 217-218
- https://doi.org/10.1109/75.222780
Abstract
The frequency response of HBT photodetectors fabricated by the MMIC HBT process has been experimentally investigated. 3-dB bandwidths of 2 GHz and more than 20 GHz have been achieved in a CE (common emitter) HBT and a CB (common base) HBT, respectively. The photoresponse of the CEHBT is approximately 25 dB higher than that of the CBHBT at 1 GHz. The CEHBT has a higher signal-to-noise ratio than a PIN/50- Omega FET amplifier at 10 GHz.Keywords
This publication has 4 references indexed in Scilit:
- An ultra-high-speed optoelectronic integrated receiver for fiber-optic communicationsIEEE Transactions on Electron Devices, 1992
- Demonstration of enhanced performance of an InP/InGaAs heterojunction phototransistor with a base terminalIEEE Electron Device Letters, 1991
- High-performance carbon-doped base GaAs/AlGaAs heterojunction bipolar transistor grown by MOCVDElectronics Letters, 1991
- Heterojunction phototransistors for long-wavelength optical receiversJournal of Applied Physics, 1982