Photoluminescent determination of Mn concentration and its diffusion in semi-insulating GaAs
- 15 February 1985
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 57 (4) , 1109-1113
- https://doi.org/10.1063/1.334553
Abstract
A method of quantitative analysis of Mn impurity in GaAs by photoluminescence intensity ratio between shallow donor–shallow acceptor and shallow donor–Mn acceptor pair emissions is proposed and experimentally verified by the diffusion of Mn into liquid-encapsulated Czochralski (LEC) and horizontal Bridgman (HB) GaAs. The concentration of Mn piled up near the surface by heat treatment in hydrogen without intentional doping was determined by this method. Very different behaviors of Mn diffusion were observed in one of the HB wafers and suggested that the replacement of Si from Ga to As sites enhances it. It was shown by the simultaneous observation of deep level photoluminescence that VGa and AsGa can also be responsible for the enhanced diffusion of Mn.This publication has 8 references indexed in Scilit:
- Plasma-assisted epitaxial growth of GaAs and GaSb layers in hydrogen plasmaIEEE Transactions on Electron Devices, 1984
- The effect of hydrogen chemisorption on GaAs(100) and GaAs(111)Solid State Communications, 1983
- Redistribution of manganese after annealing of GaAs implanted with Si+ and Se+Applied Physics Letters, 1982
- Thermal conversion of GaAsJournal of Applied Physics, 1980
- Photoluminescence in Mn-implanted GaAs—An explanation on the ∼1.40-eV emissionJournal of Applied Physics, 1979
- Determination of boron and phosphorus concentration in silicon by photoluminescence analysisApplied Physics Letters, 1978
- Thermally converted surface layers in semi-insulating GaAsApplied Physics Letters, 1977
- Optical and electrical properties of Mn-doped GaAs grown by molecular-beam epitaxyJournal of Applied Physics, 1975