Thermally converted surface layers in semi-insulating GaAs
- 1 August 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 31 (3) , 213-215
- https://doi.org/10.1063/1.89610
Abstract
Charge carrier transport in thermally converted surface layers in semi‐insulating GaAs depends on the generation, diffusion, and occupancy of Ga and As vacancies. The amphoteric nature of C in GaAs can significantly alter the density and the distribution of donors and acceptors in the vicinity of the specimen surface and the surface layer may become either p type or n type depending on the thermal treatment conditions.Keywords
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