Growth of Zinc Sulfo-Selenide Single Crystals and Their Near Band-Edge Photoluminescence
- 1 April 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (4R)
- https://doi.org/10.1143/jjap.22.674
Abstract
High-purity ZnS x Se1-x (0\leqslantx\leqslant0.15) single crystals have been grown by the sublimation method. Sharp emission due to free-exciton (Ex) has been observed for the first time in ZnS x Se1-x . The bound-exciton (I2 and I1 deep) line and the LO-phonon replicas of I1 deep line have also been observed. Energies of their peaks shift towards higher energy with the increase of composition parameter x (0\leqslantx\leqslant0.15). With increasing x, the I1 deep emission line becomes broader and approaches a Gaussian shape. The intensity of I1 deep line decreases with increasing x and becomes hardly observable for x above 0.12.Keywords
This publication has 14 references indexed in Scilit:
- Bound Exciton Emission of Zinc SelenideJapanese Journal of Applied Physics, 1981
- Photoluminescence of ZnSxSe1-xepilayers and single crystalsIEEE Transactions on Electron Devices, 1981
- Photoluminescence and heterojunction properties of ZnSxSe1-x Epitaxial layers on GaAs and Ge Grown by organometallic CVDJournal of Electronic Materials, 1981
- Effect of Native Defect Concentration on Free-Exciton Luminescence in Zinc SelenideJapanese Journal of Applied Physics, 1980
- Epitaxial Growth of Cubic ZnS x Se1 − x by Vapor Phase TransportJournal of the Electrochemical Society, 1980
- Hot excitons in semiconductorsPhysica Status Solidi (b), 1975
- Pair Spectra and the Shallow Acceptors in ZnSePhysical Review B, 1973
- Resistivity and Photoluminescence of Zn(S,Se):I Annealed in Liquid ZincJournal of the Electrochemical Society, 1973
- Optical Properties of Substitutional Donors in ZnSePhysical Review B, 1972
- Pair Spectra and "Edge Emission" in Zinc SelenidePhysical Review B, 1969