The effect of single-phonon and plasmon recombination on the lifetime in n-Hg1−xCdxTe with magnetically tuned bandgap
- 31 December 1978
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 21 (11-12) , 1471-1474
- https://doi.org/10.1016/0038-1101(78)90227-7
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
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- Magnetic Quantum Oscillations in the Auger Transition RatePhysical Review Letters, 1976
- Far‐Infrared Interband Magnetoabsorption and Band Structure of Hg1−xCdxTe AlloysPhysica Status Solidi (b), 1976
- Enhanced interband recombination in Pb1−xSnxTeJournal of Applied Physics, 1975
- Recombination in Semiconductors by Excitation of PlasmonsPhysica Status Solidi (b), 1972
- Plasma-Wave Instability in Narrow-Gap SemiconductorsPhysical Review Letters, 1970
- Recombination MechanismsPhysica Status Solidi (b), 1968