Landau-level pinning in wide modulation-doped quantum-well structures in the integer quantum Hall regime

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Abstract
Pinning effects between Landau levels in the two-dimensional electron gases on opposite sides of an asymmetric, wide quantum well in high magnetic field are reported. The process is driven by the renormalization of the potential when charge is transferred to maintain equilibrium between discrete-Landau-level densities of states. Self-consistent Hartree calculations successfully predict the pinning and many of the anomalous features observed in magnetoluminescence and magnetotransport.