A 5 GHz CMOS low-noise amplifier with inductive ESD protection exceeding 3 kV HBM
- 22 November 2004
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- A 5.2-GHz LNA in 0.35-μm CMOS utilizing inter-stage series resonance and optimizing the substrate resistanceIEEE Journal of Solid-State Circuits, 2003
- A 0.8-dB NF ESD-Protected 9-mW CMOS LNA operating at 1.23 GHz [for GPS receiver]IEEE Journal of Solid-State Circuits, 2002
- A sub-1-dB NF±2.3-kV ESD-protected 900-MHz CMOS LNAIEEE Journal of Solid-State Circuits, 2001
- High-performance 5.2 GHz LNA with on-chip inductorto provide ESD protectionElectronics Letters, 2001