Transferred-substrate InP/InGaAs/InP double heterojunctionbipolar transistors with f max = 425 GHz
- 16 August 2001
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 37 (17) , 1096-1098
- https://doi.org/10.1049/el:20010728
Abstract
InP/InGaAs/InP double heterojunction bipolar transistors (DHBTs) with fmax = 425 GHz and fτ = 141 GHz using transferred-substrate technology are reported. This is the highest reported fmax for a DHBT. The breakdown voltage BVCEO is 8 V at JC = 5 × 104 A/cm2 and the DC current gain β is 43.Keywords
This publication has 2 references indexed in Scilit:
- Submicron transferred-substrate heterojunction bipolar transistorsIEEE Electron Device Letters, 1999
- A>400 GHz f/sub max/ transferred-substrate heterojunction bipolar transistor IC technologyIEEE Electron Device Letters, 1998