Submicron transferred-substrate heterojunction bipolar transistors
- 1 August 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 20 (8) , 396-398
- https://doi.org/10.1109/55.778155
Abstract
We report submicron transferred-substrate AlInAs/GaInAs heterojunction bipolar transistors (HBT's). Devices with 0.4-/spl mu/m emitter and 0.4-/spl mu/m collector widths have 17.5 dB unilateral gain at 110 GHz. Extrapolating at -20 dB/decade, the power gain cutoff frequency f/sub max/ is 820 GHz. The high f/sub max/, results from the scaling of HBT's junction widths, from elimination of collector series resistance through the use of a Schottky collector contact, and from partial screening of the collector-base capacitance by the collector space charge.Keywords
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