Observations on residual donors in GaP LPE
- 1 January 1978
- journal article
- Published by EDP Sciences in Revue de Physique Appliquée
- Vol. 13 (12) , 741-744
- https://doi.org/10.1051/rphysap:019780013012074100
Abstract
Electron and donor concentrations and mobilities of non doped liquid phase epitaxial GaP layers were studied when varying the annealing process prior to growth. Main donors or the presence of more than one donor were identified by donor ionization energies. After short anneallings the incorporation of sulphur, after long annealings the incorporation of silicon were observedKeywords
This publication has 2 references indexed in Scilit:
- The location of the lowest conduction band minima in gallium phosphide from bound exciton luminescenceJournal of Luminescence, 1976
- Optical properties of excitons bound to neutral SiGa-donors in GaP and the degeneracy of the SiGa-donor ground stateJournal of Luminescence, 1972