Deuterium effusion measurements in doped crystalline silicon
- 1 August 1990
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 68 (3) , 1406-1409
- https://doi.org/10.1063/1.347156
Abstract
We describe first results for deuterium effusion from undoped and doped crystalline silicon (n- and p-type) treated in a D2 plasma under different conditions. The dependence of the effusion spectra on doping level, passivation temperature, sample bias, and preannealing are presented and the results are discussed on the basis of different D-bonding configurations in the passivated silicon samples.This publication has 9 references indexed in Scilit:
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