0.8 eV excitation of the quenched EL2* level in semi-insulating GaAs
- 1 September 1989
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 66 (5) , 2221-2222
- https://doi.org/10.1063/1.344274
Abstract
Excitation with 0.8 eV of the optically bleached state of semi-insulating GaAs results in a recovery of the 1–1.3 eV photocurrent. This recovery is found to occur in the advanced stages of the photoquenching with 1.1-eV light, when both the extrinsic and the intrinsic photocurrent are quenched. Such an observation is related to the existence of different metastable configurations, which are characterized by different optical sensitivities.This publication has 12 references indexed in Scilit:
- Photoinduced Acceptor Levels in Semiinsulating GaAsDefect and Diffusion Forum, 1989
- Compensation mechanism in semi-insulating GaAs: The role of intrinsic acceptor defectsApplied Physics Letters, 1988
- Analysis of photoassisted thermal recovery of metastableEL2 defects in GaAsPhysical Review B, 1988
- Optically induced regeneration of the stable configuration of the EL2 defect in GaAsApplied Physics Letters, 1987
- Insights into Metastable Defects in Semi-Insulating GaAs from Electronic Raman Studies of Nonequilibrium HolesPhysical Review Letters, 1986
- Slow-relaxation phenomena in photoconductivity for semi-insulating GaAsJournal of Applied Physics, 1985
- Optical Recovery of Photoquenching at the Midgap Electron Traps (EL2 Family) in GaAsJapanese Journal of Applied Physics, 1985
- Recovery Effect of Deep Level Luminescence Induced by Below Band-Gap Excitation in GaAsJapanese Journal of Applied Physics, 1985
- Photoelectric memory effect in GaAsJournal of Applied Physics, 1982
- Auger de-excitation of a metastable state in GaAsSolid State Communications, 1979