Exciton formation in quantum wells
- 30 April 1994
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 90 (4) , 237-240
- https://doi.org/10.1016/0038-1098(94)90467-7
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Optical detection of vertical transport in GaAs/As superlattices: Stationary and dynamical approachesPhysical Review B, 1993
- Dynamics of exciton relaxation in GaAs/As quantum wellsPhysical Review B, 1992
- Relaxation of excitons in coherently strained CdTe/ZnTe quantum wellsPhysical Review B, 1991
- Hot-exciton cascades in coupled quantum wellsPhysical Review B, 1990
- Ultrafast studies of carrier relaxation in semiconductors and their microstructuresSuperlattices and Microstructures, 1989
- Linewidth dependence of radiative exciton lifetimes in quantum wellsPhysical Review Letters, 1987
- Low-temperature exciton trapping on interface defects in semiconductor quantum wellsPhysical Review B, 1984
- Hot excitons in semiconductorsPhysica Status Solidi (b), 1975
- Binding probability of free electrons and free holes into Wannier-Mott exciton in non-polar semiconductorsJournal of Physics and Chemistry of Solids, 1973
- Determination experimentale du coefficient de formation d'excitons dans le siliciumJournal of Physics and Chemistry of Solids, 1973