Chemical vapour deposition of tungsten films for metallization of integrated circuits
- 1 December 1984
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 122 (3) , 243-258
- https://doi.org/10.1016/0040-6090(84)90051-8
Abstract
No abstract availableThis publication has 25 references indexed in Scilit:
- Properties of chemically vapor-deposited Tungsten thin films on silicon wafersThin Solid Films, 1983
- Dependence of electronic properties of polysilicon grain size and intragrain defectsSolid-State Electronics, 1983
- Investigation of parameter sensitivity of short channel mosfetsSolid-State Electronics, 1982
- Optically active interface states in MOS structuresSolid-State Electronics, 1980
- Kinetics and properties of chemically vapour-deposited tungsten films on silicon substratesThin Solid Films, 1978
- Inelastic light scattering studies of chemical vapor deposition systemsThin Solid Films, 1977
- Chemically Vapor Deposited Tungsten for Semiconductor MetallizationsJournal of the Electrochemical Society, 1974
- The Deposition of Molybdenum and Tungsten Films from Vapor Decomposition of CarbonylsJournal of the Electrochemical Society, 1970
- Electrical Resistivity of Tungsten Films Prepared by WF[sub 6] ReductionJournal of the Electrochemical Society, 1969
- The Si-Wsi[sub 2]-Si Epitaxial StructureJournal of the Electrochemical Society, 1967