The influences of traps on the generation-recombination current in silicon diodes
- 30 June 1980
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 23 (6) , 655-660
- https://doi.org/10.1016/0038-1101(80)90051-9
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Inconsistencies in the original form of the fletcher boundary conditionsSolid-State Electronics, 1978
- Transition region behavior in abrupt, forward-biased pn-junctionsSolid-State Electronics, 1977
- Generation-recombination characteristic behavior of silicon diodesPhysica Status Solidi (a), 1973
- An investigation of lateral transistors -d.c. characteristicsSolid-State Electronics, 1971
- Boundary conditions for the space-charge region of a P-N-junctionSolid-State Electronics, 1969
- On the theory of logorithmic silicon diodesRadio and Electronic Engineer, 1969
- Modified theory of the current/voltage relation in silicon p – n junctionsElectronics Letters, 1968
- Hole-electron product of pn junctionsSolid-State Electronics, 1967
- High injection theories of the p−n junction in the charge neutrality approximationSolid-State Electronics, 1966
- Carrier Generation and Recombination in P-N Junctions and P-N Junction CharacteristicsProceedings of the IRE, 1957