Selective Self-Formation of InAs Quantum Dots on Strained InGaAs Layers by Molecular Beam Epitaxy
- 1 July 1997
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 36 (7A) , L871
- https://doi.org/10.1143/jjap.36.l871
Abstract
InAs was grown on a strained InGaAs/GaAs(001) layer by molecular beam epitaxy. The critical thickness and the dot structure of the InAs were investigated as a function of the thickness of the InGaAs base layer. The critical thickness of the InAs layer increased with decreasing residual strain of the InGaAs surface. Chains of self-formed InAs dots were partially observed along the [110] direction. This selective self-formation of InAs dots was caused by a strain distribution and an anisotropy of the residual strain on the InGaAs surface.Keywords
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