The combination of two growth methods for the epitaxial deposition of silicon films on insulating substrates
- 1 December 1972
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 17, 249-253
- https://doi.org/10.1016/0022-0248(72)90254-0
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- A Stagnant Layer Model for the Epitaxial Growth of Silicon from Silane in a Horizontal ReactorJournal of the Electrochemical Society, 1970
- Silicon Epitaxy from Mixtures of SiH4 and HClJournal of the Electrochemical Society, 1970
- Single-crystal films of silicon on insulatorsBritish Journal of Applied Physics, 1967
- Vapor Phase Deposition and Etching of SiliconJournal of the Electrochemical Society, 1965