Topographical changes induced by low energy ion beam sputtering at oblique incidence
- 1 January 1983
- journal article
- Published by Taylor & Francis in Radiation Effects
- Vol. 77 (3) , 177-193
- https://doi.org/10.1080/00337578308228185
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- The effect of incidence angle on ion bombardment induced surface topography development on single crystal copperNuclear Instruments and Methods in Physics Research, 1982
- Theoretical assessments of major physical processes involved in the depth resolution in sputter profilingRadiation Effects, 1982
- The crystallographic dependence of surface topographical features formed by energetic ion bombardment of copperNuclear Instruments and Methods, 1980
- The mechanisms of etch pit and ripple structure formation on ion bombarded Si and other amorphous solidsNuclear Instruments and Methods, 1980
- Investigations on the damage caused by ion etching of SiO2 layers at low energy and high doseSolid-State Electronics, 1977
- Analytical modelling of sputter induced surface morphologyRadiation Effects, 1977
- Sputtering—Surface changes induced by ion bombardmentProgress in Surface Science, 1976
- Blistering of molybdenum under helium ion bombardmentRadiation Effects, 1973
- Development of the surface topography on silica glass due to ion-bombardmentJournal of Materials Science, 1972