Excitonic Photon Absorption-Emission Characteristics in ZnCdSe-ZnSe Single-Quantum-Well Structures
- 1 September 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (9B) , L1362
- https://doi.org/10.1143/jjap.31.l1362
Abstract
Excitonic photon absorption and emission processes are investigated under zero or external electric fields on MOVPE grown (Zn1-x Cd x )Se-ZnSe:x=0.18 single quantum wells (SQWs). The effects of a dc electric field applied perpendicularly on absorption and emission processes are examined by electric field-controlled photoluminescence (PL), electroreflectance (ER) and photocurrent (PC) spectrum measurements. The characteristics of optically excited spontaneous and stimulated emissions from the SQWs are different in both spectrum peak energies and field effects from those expected in the heavy hole mass (H-H) exciton ground state (n=1) in quantum wells.Keywords
This publication has 9 references indexed in Scilit:
- Blue-green laser diodesApplied Physics Letters, 1991
- Acceptor compensation mechanism by midgap defects in nitrogen-doped ZnSe filmsApplied Physics Letters, 1991
- Room-temperature exciton absorption in (Zn,Cd)Se/ZnSe quantum wells at blue-green wavelengthsApplied Physics Letters, 1990
- Laser action in the blue-green from optically pumped (Zn,Cd)Se/ZnSe single quantum well structuresApplied Physics Letters, 1990
- Nitrogen-doped p-type ZnSe films grown by MOVPEJournal of Crystal Growth, 1988
- Recombination radiation and electroreflection of excitons in ZnxCd1−xSe solid solutionsPhysica Status Solidi (b), 1986
- Electric field dependence of optical absorption near the band gap of quantum-well structuresPhysical Review B, 1985
- Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark EffectPhysical Review Letters, 1984
- Effect of an electric field on the luminescence of GaAs quantum wellsPhysical Review B, 1982