Angular resolved x-ray photoemission study of defects induced by ion bombardment on the TiO2 surface
- 1 August 1988
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 32 (4) , 352-362
- https://doi.org/10.1016/0169-4332(88)90087-6
Abstract
No abstract availableKeywords
This publication has 26 references indexed in Scilit:
- Estimation of Low-Energy Ion Bombardment Damage on GaAs(001) Surface by X-Ray Photoelectron DiffractionJapanese Journal of Applied Physics, 1986
- X-Ray Photoelectron Diffraction (XPED) Studies on Metal Oxide Surfaces. (I) Analysis of the XPED Patterns from TiO2(001) and α-Al2O3(0001) by the Single Scattering CalculationBulletin of the Chemical Society of Japan, 1985
- XPS investigation of strong metal-support interactions on Group IIIa?Va oxidesJournal of Catalysis, 1982
- Empirical atomic sensitivity factors for quantitative analysis by electron spectroscopy for chemical analysisSurface and Interface Analysis, 1981
- Photoelectron diffraction effects in XPS angular distributions from GaAs(110) and Ge(110) single crystalsJournal of Electron Spectroscopy and Related Phenomena, 1981
- On the reliability of intensity measurements for surface structure analysis by LEEDJournal of Physics C: Solid State Physics, 1980
- Estimation of Surface Crystal Regularity by Utilizing X-Ray Photoelectron Diffraction (XPED) EffectsJapanese Journal of Applied Physics, 1980
- Azimuthal Anisotropy in Core-Level X-Ray Photoemission fromOxygen on Cu(001): Experiment and Single-Scattering TheoryPhysical Review Letters, 1978
- Observation of Two-Dimensional Phases Associated with Defect States on the Surface of TiPhysical Review Letters, 1976
- Electrochemical Photolysis of Water at a Semiconductor ElectrodeNature, 1972